IRFZ44 N-Channel MOSFET
- Product SKU: R1254
- Category: Best Sellers, Electronic Components, Quick Deliverables, Semiconductors & Prototyping Components, Transistors, Under ₹100
A metal–oxide–semiconductor field-effect transistor (MOSFET) operates as a field-effect transistor where the applied voltage regulates its conductivity. This component is essential for both switching and amplifying signals. Its ability to modulate conductivity based on voltage makes it ideal for enhancing or switching electronic signals. In applications requiring the management of high current loads with minimal in-circuit resistance, a power MOSFET is crucial for improving circuit efficiency. The IRFZ44 N-Channel MOSFET features a low GATE threshold voltage of 4V, allowing compatibility with 5V development boards; however, to achieve full saturation, a minimum of 10V must be applied to the gate terminal. This MOSFET is commonly used for switching high-power devices, controlling motor speeds, and in LED dimmers and flashers.
Specifications
-
N-Channel MOSFET for small signal applications
-
Continuous Drain Current (ID) rated at 49A at 25°C
-
Pulsed Drain Current (ID-peak) reaches up to 160A
-
Minimum Gate threshold voltage (VGS-th) is 2V
-
Maximum Gate threshold voltage (VGS-th) is 4V
-
Gate-Source Voltage (VGS) is ±20V (maximum)
-
Maximum Drain-Source Voltage (VDS) is 55V
-
Provided in To-220 package
Package Contents
1×IRFZ44 N-Channel MOSFET
A metal–oxide–semiconductor field-effect transistor (MOSFET) operates as a field-effect transistor where the applied voltage regulates its conductivity. This component is essential for both switching and amplifying signals. Its ability to modulate conductivity based on voltage makes it ideal for enhancing or switching electronic signals. In applications requiring the management of high current loads with minimal in-circuit resistance, a power MOSFET is crucial for improving circuit efficiency. The IRFZ44 N-Channel MOSFET features a low GATE threshold voltage of 4V, allowing compatibility with 5V development boards; however, to achieve full saturation, a minimum of 10V must be applied to the gate terminal. This MOSFET is commonly used for switching high-power devices, controlling motor speeds, and in LED dimmers and flashers.
Specifications
-
N-Channel MOSFET for small signal applications
-
Continuous Drain Current (ID) rated at 49A at 25°C
-
Pulsed Drain Current (ID-peak) reaches up to 160A
-
Minimum Gate threshold voltage (VGS-th) is 2V
-
Maximum Gate threshold voltage (VGS-th) is 4V
-
Gate-Source Voltage (VGS) is ±20V (maximum)
-
Maximum Drain-Source Voltage (VDS) is 55V
-
Provided in To-220 package
Package Contents
1×IRFZ44 N-Channel MOSFET
Return Policy Overview
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Return Window
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Warranty does not cover: misuse, soldering damage, modifications, physical damage, or incorrect electrical connections.
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Customer Service Commitment
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✉️ support@robodium.com
Last updated: January 2026
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