IRF540 N-Channel MOSFET
- Product SKU: R1253
- Category: Electronic Components, Semiconductors & Prototyping Components, Transistors
The metal–oxide–semiconductor field-effect transistor (MOSFET) functions as a field-effect transistor where conductivity is modulated by voltage. This characteristic makes it well-suited for both switching and amplifying signals. In an N-channel MOSFET, the drain and source are formed from heavily doped n+ regions, while a p-type substrate facilitates current flow through negatively charged electrons. The IRF540N is an N-Channel MOSFET that can manage loads of up to 23A and support peak currents reaching 110A. With a threshold voltage of 4V, it can be efficiently driven by low voltages like 5V, making it an excellent choice for integration with Arduino boards and various microcontrollers for logic-level switching applications. Its remarkable switching capabilities also make this MOSFET ideal for projects involving motor speed control and light dimming.
Specifications
N-Channel MOSFET for small signal applications
Continuous Drain Current (ID) rated at 33A at 25°C
Pulsed Drain Current (ID-peak) up to 110A
Minimum Gate threshold voltage (VGS-th) of 2V
Maximum Gate threshold voltage (VGS-th) of 4V
Gate-Source Voltage (VGS) of ±20V
Maximum Drain-Source Voltage (VDS) of 100V
Packaged in TO220 format
Product Description
Package Content
1× IRF540 N Channel MOSFET
The metal–oxide–semiconductor field-effect transistor (MOSFET) functions as a field-effect transistor where conductivity is modulated by voltage. This characteristic makes it well-suited for both switching and amplifying signals. In an N-channel MOSFET, the drain and source are formed from heavily doped n+ regions, while a p-type substrate facilitates current flow through negatively charged electrons. The IRF540N is an N-Channel MOSFET that can manage loads of up to 23A and support peak currents reaching 110A. With a threshold voltage of 4V, it can be efficiently driven by low voltages like 5V, making it an excellent choice for integration with Arduino boards and various microcontrollers for logic-level switching applications. Its remarkable switching capabilities also make this MOSFET ideal for projects involving motor speed control and light dimming.
Specifications
N-Channel MOSFET for small signal applications
Continuous Drain Current (ID) rated at 33A at 25°C
Pulsed Drain Current (ID-peak) up to 110A
Minimum Gate threshold voltage (VGS-th) of 2V
Maximum Gate threshold voltage (VGS-th) of 4V
Gate-Source Voltage (VGS) of ±20V
Maximum Drain-Source Voltage (VDS) of 100V
Packaged in TO220 format
Product Description
Package Content
1× IRF540 N Channel MOSFET
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Last updated: January 2026
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