IRF540 N-Channel MOSFET
Rated 3.5/5 based on 11 customer reviews

IRF540 N-Channel MOSFET

Available: In Stock
₹29.00 (Inclusive of 18% GST)
Image
Product Title: IRF540 N-Channel MOSFET Rephrased Description:

The metal–oxide–semiconductor field-effect transistor (MOSFET) functions as a field-effect transistor where conductivity is modulated by voltage. This characteristic makes it well-suited for both switching and amplifying signals. In an N-channel MOSFET, the drain and source are formed from heavily doped n+ regions, while a p-type substrate facilitates current flow through negatively charged electrons. The IRF540N is an N-Channel MOSFET that can manage loads of up to 23A and support peak currents reaching 110A. With a threshold voltage of 4V, it can be efficiently driven by low voltages like 5V, making it an excellent choice for integration with Arduino boards and various microcontrollers for logic-level switching applications. Its remarkable switching capabilities also make this MOSFET ideal for projects involving motor speed control and light dimming.

 

Specifications

  • N-Channel MOSFET for small signal applications

  • Continuous Drain Current (ID) rated at 33A at 25°C

  • Pulsed Drain Current (ID-peak) up to 110A

  • Minimum Gate threshold voltage (VGS-th) of 2V

  • Maximum Gate threshold voltage (VGS-th) of 4V

  • Gate-Source Voltage (VGS) of ±20V

  • Maximum Drain-Source Voltage (VDS) of 100V

  • Packaged in TO220 format

 

Product Description

 Package Content

1× IRF540 N Channel MOSFET

Product Title: IRF540 N-Channel MOSFET Rephrased Description:

The metal–oxide–semiconductor field-effect transistor (MOSFET) functions as a field-effect transistor where conductivity is modulated by voltage. This characteristic makes it well-suited for both switching and amplifying signals. In an N-channel MOSFET, the drain and source are formed from heavily doped n+ regions, while a p-type substrate facilitates current flow through negatively charged electrons. The IRF540N is an N-Channel MOSFET that can manage loads of up to 23A and support peak currents reaching 110A. With a threshold voltage of 4V, it can be efficiently driven by low voltages like 5V, making it an excellent choice for integration with Arduino boards and various microcontrollers for logic-level switching applications. Its remarkable switching capabilities also make this MOSFET ideal for projects involving motor speed control and light dimming.

 

Specifications

  • N-Channel MOSFET for small signal applications

  • Continuous Drain Current (ID) rated at 33A at 25°C

  • Pulsed Drain Current (ID-peak) up to 110A

  • Minimum Gate threshold voltage (VGS-th) of 2V

  • Maximum Gate threshold voltage (VGS-th) of 4V

  • Gate-Source Voltage (VGS) of ±20V

  • Maximum Drain-Source Voltage (VDS) of 100V

  • Packaged in TO220 format

 

Product Description

 Package Content

1× IRF540 N Channel MOSFET

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Last updated: January 2026

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